Focused Ion Beam Workstation Facility

摘要

An FEl Company 610 series, Focussed Ion Beam (FIB) instrumentation facility hasbeen installed. This ultrahigh resolution nanoscale technology system can remove/deposit material on submicron lateral and vertical scales, and allows precise lateral and vertical etch/deposition and cross sections of device features and structural defects that are either impossible of impractical by conventional cleaving or lapping techniques. Using gallium LMI technology, computer controlled positioning and ultrafine machining deposition, the FIB system can perform multiple cross sections on the same sample, expose subsurface nodes, form probe pads for electrical analysis, and prepare ultra precise samples for high resolution TEM/STEM. The research supported by this instrumentation concentrates on but is not limited to advanced electronic device manufacturing development. Additional, more general research areas include analysis of ceramic materials, titanium aluminide composites, ultra low temperature brazing alloy development, and molten metal-ceramic interactions.