Facile Preparation of Nanocrystalline Gallium Antimonide

机译：简易制备纳米晶镓镓

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The 1:1 reaction of GaCl3 with Sb(SiMe3)3 in pentane solution affords anintermediate material which, upon thermolysis, yields nanocrystalline GaSb with an approximate average particle size of 12 nm. The product was characterized through powder X-ray diffraction, elemental analysis, and HRTEM.

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Baldwin, R. A.; Foos, E. E.; Wells, R. L.;
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年度 1996
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总页数 11
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Crystals; Gallium antimonides; Materials; Powders; X ray diffraction; Highresolution; Electron microscopy; Solutions(General); Silicon; Chemical reactions; Chlorides; Chemical analysis; Chemical elements; Pentanes;

机译：晶体;锑化镓;材料;粉末; X射线衍射;高分辨率;电子显微镜;溶液（通用）;硅;化学反应;氯化物;化学分析;化学元素;戊烷;

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1. Preparation of single-source precursors to nanocrystalline gallium arsenide and gallium antimonide. X-ray crystal structures of [Et_2GaAs(SiMe_3)_2]_2, [Et_2GaSb(SiMe_3)_2]_2 and Et_2GaAs(SiMe_3)_2Ga(Et)_2Sb(SiMe_3)_2 [J] . Edward E. Foos, Richard J. Jouet, Richard L. Wells, Journal of Organometallic Chemistry . 1999,第1期

机译：制备纳米晶砷化镓和锑化镓的单源前体。 [Et_2GaAs（SiMe_3）_2] _2，[Et_2GaSb（SiMe_3）_2] _2和Et_2GaAs（SiMe_3）_2Ga（Et）_2Sb（SiMe_3）_2的X射线晶体结构
2. Ammonolytical conversion of microcrystalline gallium antimonide GaSb to nanocrystalline gallium nitride GaN: thermodynamics vs. topochemistry [J] . Drygas Mariusz, Jelen Piotr, Bucko Miroslaw M., RSC Advances . 2015,第100期

机译：微晶锑化镓GaSb到纳米晶氮化镓GaN的氨解转化：热力学与拓扑化学
3. Synthesis and Characterisation of Gallium Antimonide Nanoparticles: Reaction between Tris(trimethylsilyl)antimonide and Gallium Trichloride [J] . Stephan Schulz, Leonardo Martinez, Jean L. Ross Advanced Materials for Optics and Electronics . 1996,第4期

机译：锑化镓纳米粒子的合成与表征：三（三甲基甲硅烷基）锑化物与三氯化镓的反应
4. A study of the preparation of epitaxy-ready polished surfaces of (100) Gallium Antimonide substrates demonstrating ultra-low surface defects for MBE growth [C] . Rebecca Martinez, Marius Tybjerg, Patrick Flint, Infrared Technology and Applications XLII . 2016

机译：（100）锑化镓衬底外延就绪抛光表面的制备研究表明，MBE生长具有超低表面缺陷
5. Surface preparation of gallium antimonide and indium antimonide for MBE growth and development of antimony alloy based devices [D] . Vangala, Shivashankar 2007

机译：镓锑苷酸和铟锑苷的表面制备MBE生长和锑合金基于锑的发展
6. Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide [O] . Herbert S. Bennett, Howard Hung 2003

机译：N型锑化镓中电子密度对费米能的依赖性
7. Growth and characterization of indium antimonide and gallium antimonide crystals [O] . Udayashankar NK, Bhat HL 2001

机译：锑化铟和锑化镓晶体的生长和表征

Facile Preparation of Nanocrystalline Gallium Antimonide

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