International Workshop on Growth, Characterization and Exploitation of EpitaxialCompound Semiconductors on Novel Index Surfaces (NIS'96). Lyon (France) 7-9 Oct 1996

摘要

Partial contents: Piezoelectric effects in strained layer heterostructures grownon novel index surfaces; Photoluminescence investigations of GaAs on non (100) surfaces; High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy; Optical investigation of piezoelectric field effects on excitonic properties in(111)-B-Grown (In,Ga)As/GaAs quantum wells; Selenium doping in high-index GaAs epilayers grown by molecular beam epitaxy; Piezoelectricity and carrier dynamics in In(0.2)Ga(0.8)As/GaAs single quantum wells grown on (n11)A-oriented GaAs (n=l,2,3); Memory effects on piezoelectric InGaAs/GaAs MQW PIN diodes; Electronic states in QWs grown on high index surfaces; Charge accumulation effects in InGaAs/GaAs MQWs (111) oriented piezoelectric MQW; Application of high-resolution X-ray diffractometry to the structural study of epitaxial multilayers on novel index surfaces; Critical thickness and relaxation of (111) oriented strained epitaxial layers; A study of the mobility anisotropy in front and back-gated (311)A hole gas heterojunctions.