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EPR and Electrical Investigations of Point Defects and Hopping Motion in SiC Heavily Doped with Nitrogen

机译：氮掺杂重叠siC中点缺陷和跳跃运动的EpR和电学研究

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This report results from a contract tasking Institute of Semiconductor Physics, National Academy of Sciences, Ukraine.

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作者
Kalaboukhova, E.;
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年度 1997
页码 1-12
总页数 12
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductors; Point defects; Electrical properties; Nitrogen; Doping; Silicon carbides; Ukraine;

机译：半导体;点缺陷;电性能;氮;掺杂;碳化硅;乌克兰;

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1. Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals [J] . Kiyo Okawa, Yuina Mannen, Kentaro Shioura, Materials science forum . 2018,第期

机译：垂直和平行于重氮掺杂4H-SiC晶体的基底平面的电阻率的退火行为
2. Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules [J] . Kohei Ohtomo, Nana Matsumoto, Koji Ashida, Materials science forum . 2017,第期

机译：重氮掺杂4H-SiC球团（000-1）C面上的表面形貌和堆垛层错成核研究
3. Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals [J] . Chisato Taniguchi, Aiko Ichimura, Noboru Ohtani, Journal of Applied Physics . 2016,第14期

机译：重氮掺杂4H-SiC晶体中基面堆积断层形成的理论研究
4. Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC [C] . E.N. Kalabukhova, S.N. Lukin, W.C. Mitchel 4th European Conference on Silicon Carbide and Related Materials (ECSCRM 2002); Sep 2-5, 2002; Linkoeping, Sweden . 2002

机译：n型初生4H-SiC中氮和碳反位相关自然缺陷的电和多频EPR研究
5. An EPR investigation of atomic silver and divalent silver in irradiated single crystal of potassium fluoride doped with silver fluoride [D] . Yu, Cheng. 1991

机译：掺杂氟化银的氟化钾辐照单晶中原子银和二价银的EPR研究
6. A Novel 4H-SiC MESFET with a Heavily Doped Region a Lightly Doped Region and an Insulated Region [O] . Hujun Jia, Mengyu Dong, Xiaowei Wang, 2021

机译：具有重掺杂区域的新型4H-SiC MESFET轻微掺杂的区域和绝缘区域
7. Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects: an EPR study of oxidized porous SiC [O] . 2015

机译：4H-siC / siO2界面缺陷的微观结构和电学活性：氧化多孔siC的EpR研究

EPR and Electrical Investigations of Point Defects and Hopping Motion in SiC Heavily Doped with Nitrogen

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