NATO Advanced Study Institute on Plasma Processing of Semiconductors

摘要

Partial contents: Introduction to Plasma Etching; Plasma Chemistry, BasicProcesses and PECVD; The Role of ions in Reactive Ion Etching with Low Density Plasmas; SiO2 Etching in High-Density Plasmas: Differences with Low-Density Plasmas; Introduction to Plasma Enhanced Chemical Vapor Deposition; Topography Evolution During Semiconductor Processing; Deposition of Amorphous Silicon; High Density Sources for Plasma Etching; Resonant Plasma Excitation by Electron Cyclotron Waves-Fundamentals and Applications; The Transition from Capacitive to Inductive to Wave Sustained Discharges.