Gallium Arsenide Nitride: A New Material for Optical Interconnects on SiliconCircuits

摘要

A proposed direct bandgap ternary material, lattice matchable to silicon, wasexplored in this exploratory effort. About a dozen molecular beam epitaxy growth runs were performed on gallium arsenide and gallium phosphide, and growths analyzed via Auger spectroscopy, x-ray diffraction, and transmission electron microscopy. Up to 20% nitrogen was Incorporated. Single crystal quality material with about 2% nitrogen was detected. Segregation into gallium nitride and gallium arsenide was always seen.