Study Into the Design of the Semiconductor Power Pulsers With Less Than 1Nanosecond Front and Up to 100 kV Output

摘要

The technology of short (less than 10(exp -8 s)) pulse generation is limited, asa rule, by availability of switching devices (closing or opening switches). The most promising devices are semiconductor devices, but until last years the power of semiconductor devices have been far lower, than the power of gas-discharge gaps or magnetic compressing cells. In the last decade, a promising trend connected with the appearance of high-power, super fast semiconductor devices has arisen. The devices operation is based on recently discovered physical effects: superfast recovery of high voltage diodes, and delayed overvoltaged breakdown.