Quantum Device Fabricant Based on High Resolution Patterning with ReactiveNeutral Beams

摘要

Research performed at Columbia University in which etch-defined features werefabricated in multiple quantum well semiconductor material, is described. Photon-assisted neutral atom etching was demonstrated to produce damage free features in GaAs-based quantum well material. The technique was applied in the fabrication of a single quantum well circular ring laser with low-loss etched sidewalls. The photoluminescence efficiency of magnetron reactive ion etched features was also investigated as a function of rf power and etching time. Low-temperature electron-beam enhanced etching and chemically assisted ion beam etching were characterized and applied to the fabrication of nanometer-sized features in III-V semiconductor material.