JSEP Augmentation Proposal: Velocity Overshoot in Silicon Inversion Layer

摘要

The transport properties of carriers in the inversion layer was studied by usingthe thick-gate uniform channel field MOS transistor. Using devices with sub-100nm channel lengths, we performed an extensive investigation of ballistic transport in inversion layer under uniform field condition. We experimentally address the effect of a wide range of parameters on the high-field transport of Inversion layer electrons and holes. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocities on nitridation of the gate oxide, dependence of the high-field drift velocity on the effective vertical field, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.