Numerical Studies of the Physics and Operation of LTG Materials and Devices

摘要

This document summarizes Scientific Research Associates, Inc., (SRA) lowtemperature material studies carried out under U.S. Air Force Office of Scientific Research (AFOSR) Contract F49620-94-C-0024. The study summarizes a model that was developed that is consistent with present low temperature growth (LTG) experimental studies. SRA's study included one dimensional transient simulations and two dimensional time independent constrained geometric studies. The broad aspects of the study indicate that annealed LTG GaAs is best represented as material containing precipitates with characteristics of embedded Schottky barriers. These embedded barriers are, in turn surrounded by defects. Carrier transport in annealed LTG GaAs is between the precipitates, with the details determined by the precipitate spacing, the concentration of traps, and properties of the surrounding traps. The two dimensional studies provide numerical evidence that carriers travel between precipitates and are influenced, to first order, by the properties of the surrounding traps.