Light Emission and Energy Transfer in Nanoscale Semiconductor Photonic Devices

摘要

The overall objective of this experimental program is to control the lightemission properties and energy transfer mechanisms in nanoscale semiconductor structures in order to realize new or improved photonic devices. For nanostructures that are defined by buried heterojunction interfaces, the focus is to define the regimes in which scattering and carrier collection dominate the performance of quantum well and superlattice devices. For nanostructures with exposed surfaces, the focus is to understand the fundamental light emission mechanisms. The proposed research impacts device development and system architectures by demonstrating light emitters for wavelength division multiplexing, three dimensional IOEC structures, broadly tunable lasers, and low loss waveguides. Most recently the impact of these phenomena have been studied in the wide bandgap A1GaN material system. We have demonstrated stimulated emission in GaN, InGaN thin films and quantum well heterostructures. We have also done absorption measurements and observed multiple excitons.