1.5 Micron Wavelength Optical Devices Grown by Gas Source Molecular Beam Epitaxy

摘要

The purpose of this program was to demonstrate the integration of InP-basedlasers and other optical devices using a simple, platform integration technology. During this program, we successfully implemented the novel concept of a twin waveguide structure with loss layer which demonstrated nearly 50% coupling between the active laser devices and the integrated waveguide. This coupling, which is cavity-length independent, allows for the integration of lasers, optical amplifiers, waveguides and modulators on a single epitaxial structure.