Enhancement of the Nonlinear Response of the Semiconductor Tunnel Structures in the Skin-Effect Regime.

摘要

Nonlinear AC response of the semiconductor barrier semiconductor structures is considered. It is shown that in the vicinitv of the barrier a low frequency plasma excitations junction ptasma polaritons (JPPs) are excited on high frequencies. The excitation of JPPs has a substantial effect on the rectification properties of the structures in the skin-effect regime (on the frequency of 100 GHz and higher for the typical parameters of the structures). It leads to an essential increase in the rectified voltage. Its increase could be as large as one order of magrntude for the typical parameters of the structures.