International Conference on Defects in Semiconductors (19th), ICDS-19, Held in Aveiro, Portugal on 21-25 July 1997, Part 1

摘要

Emphasis is given to the properties of wide-bandgap materials, including quantum enhancement of effective band-gaps. semiconductors (silicon and III-V materials), plus radiation effects on detector materials. Topics also include: (1) GaN, (2) Nanostructures, (3) Large bandgap materials, (4) defects in epitaxial growth, (5) self-organizing rare earth, (6) metastable defects, (7) pairs and complexes, (8) defect reactions, and (9) radiation effects on detector material.