Single-Word Multiple-Bit Upsets in Static Random Access Devices

摘要

Space-borne electronics systems incorporating high-density static random accessmemory (SRAM) are vulnerable to single-word multiple-bit upsets (SMUs). We review here recent observations of SMU, present the results of a systematic investigation of the physical cell arrangements employed in several currently available SRAM device types, and discuss implications for the occurrence and mitigation of SMU.