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Damping of Manganese Spin Precession in the Presence of Free Carriers in CdMnTe Quantum Wells.

机译:CdmnTe量子阱中自由载流子存在下锰离子进动阻尼的阻尼。

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摘要

The transverse relaxation time T2 of the Mn spins has been measured by time resolved photo induced Kerr rotation in n-type and p-type CdMnTe quantum wells with a magnetic field applied parallel to the quantum well plane. The dependencies of T2 on the magnetic field and on the carrier density indicate the influence of carriers on T2. A model, akin to dielectric relaxation, is proposed to explain qualitatively these results.

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