Photoconductive GaN UV Detectors

摘要

This report results from a contract tasking University of Warsaw as follows: The contractor will investigate the growth of GaN material using atmospheric pressure metalorganic chemical vapor deposition method (MOCVD). The contractor shall develop and optimize Mg doped GaN epitaxial layers which will be able to serve as a base for sensitive photoconductive UV detector. The contractor will grow and perform basic characterization and photoluminescence of the GaN material. Samples will be delivered to Phillips Lab, at Albuquerque NM alter the growth and electrical characterizations were made in the Institute of Experimental Physics at Warsaw, Poland.