High-Quality C-Axis Oriented HTSC Films for Microwave Devices

摘要

C-axis oriented HTSC films were grown by LPE on various substrates. The conditions for improving the surface flatness were systematically studied. For the achievement of interstep distances yo approx. 10 micrometers between monosteps of 12 Angstroms, as required for Tunnel devices, following requirements were estimated: undercooling delta-T = 0.17K, misfit