International Conference on Terahertz Electronics (8th), Held in Darmstadt, Germany on 28-29 September 2000.

摘要

Field Emission Studies for Microwave and Optical Wave Generation; Narrow-Linewidth Interwell Terahertz Intersubband Emission; Plasma Instability and Terahertz Oscillations in Resonant-Tunneling Transistors; Feasibility of a SiGe THz Resonant-State Laser; The Copper-doped p-Ge ZHz Laser in the Voigt Configuration: Possibility of Mode-locked operation; THz Sources Based on Semiconductor Quantum Structures; Thermal Receiver Detectable THz Radiation from an InAs Irradiated with 1.04-micron Femtosecond Fiber Laser in a 2-T Permanent Magnet; Frequency Difference Generation in the Terahertz Region Using LTG-GaAs Photodetector; Self-Generation of Ultra-Short Pulses in a Cavity with a Dielectric Mirror Excited by an Array of Active THz Devices; Gain and Loss in Terahertz Intersubband Emitters Modelling of Micromachined Klystrons for Terahertz Operation Observation of Terahertz Oscillations and Efficient THz Emission from Contacted Low-Temperature-Grown GaAs Structures; Study of Terahertz Radiation from Narrow Bandgap Semiconductors: and InSb; Solid-State Oscillators for the THz-Range Frequency Tripler with Anti-Serial Schottky Diodes; 2D Design of Schottky Diodes; A Novel Evolutionary Approach for the Analysis and Optimization of THz Nonlinear Circuits; Cryogenic Operation of GaAs-Based Multiplier Chains to 400 GHz Prospects of Compound Semiconductor Quantum Nanostructures for Terahertz Generation, Amplification and Detection; Ultrabroadband Detection of Terahertz Radiation up to 20 THz with an LT-GaAs Photoconductive Antenna Gated by 15 fs Laser Pulses.