Oxide Based Transistor for Flexible Displays.

摘要

The team of NC A&T and RTI, International investigated In free GaSnZnO (GSZO) material system, as the active channel in thin film transistors (TFTs) for next generation display technologies. A detailed and comprehensive study was carried out to ascertain the processproperty relationships of radio frequency (RF) sputtered GSZO films as a function of number of deposition parameters, including deposition temperature, process pressure and annealing temperature, duration and ambient using variety of characterization techniques for chemical and microstructural properties, electrical and opto-electrical properties. The impact of process conditions on the device performance was also subject of detailed study.