Metasurface with Reconfigurable Reflection Phase for High-Power Microwave Applications

摘要

We propose a metasurface with reconfigurable reflection phase that can be utilized in high power microwave (HPM) applications. The structure relies on capacitor networks controlled by appropriately biased PIN diodes. Simulations reveal that the metasurface has a reflection phase tuning range of approximately 300 degrees with an associated change in capacitance of 2.7 pF.