Materials Issues in the Development of High Data-Transfer-Rate Phase- Change Compounds.

摘要

A model is presented to calculate glass-transition temperatures. This model in combination with experimental data is used to evaluate archival-life stability of common phase change materials Ge2Sb2Te5 and doped eutectic Sb2Te compositions. On the basis of this model, novel high-data-rate phase change compositions have been identified near and on the pseudo-binary line InSb-GaSb in the ternary system Ga-In-Sb.