Catalyst-Free Growth of Large Scale Ga2O3 Nanowires.

摘要

Large scale of straight Ga2O3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N2/H2O reactants. The Ga2O3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga2O3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission of 375 nm at room temperature.