Research of Possibility of Semi-Conducting CdGeAs2 Making by the Way of Deep Impurities Doping

摘要

This report results from a contract tasking Advanced Technologies for Optical Materials (ATOM) as follows: The contractor will develop methods of semi-conducting high-resistance CdGeAs2 crystal production by way of control doping by the impurities Cu, Au, Zn, Sc, and Se. Selection of the most promising impurities and optimization of the doping technology will allow minimization of optical loses in CdGeAs2-crystals and related to manufacture of ternary CdGeAs2 crystals with low absorption coefficient for practical purposes of nonlinear optics.