Quantum wells; Image processing; Electrooptics; Passive systems; Integrated circuits; Photonics; Far infrared radiation; Frequency bands; Silicon; Infrared detectors; Doping; Photodetectors; Germanium; Focal plane arrays; United kingdom; Carrier dynamics; Sige quantum well devices; Foreign reports; Aq f02-12-3393; Optoelectronic devices; Qwip(Quantum well infrared photodetector); Terahertz electronics;
机译:基于应变SiGe / Si单量子阱的太赫兹发射的载流子动力学
机译:共振杂质散射对Si / SiGe量子阱中载流子动力学的影响
机译:太赫兹量子级联结构中载流子动力学与温度之间的关系:GaAs / AlGaAs,SiGe / Si和GaN / AlGaN器件的仿真
机译:在基于量子点的红外光电探测器中,暗电流和噪声对封盖厚度的依赖性建模。
机译:新型多色量子阱红外光电探测器和高级量子点红外光电探测器的研究。
机译:近红外介导的量子点和紫杉醇共载纳米结构脂质载体系统的进一步发展。
机译:共振杂质散射对si / siGe量子阱中载流子动力学的影响