80-240 GHz Radar and Communications in Transferred Substrate HBT technology.

摘要

The program supported the development of high bandwidth heterojunction bipolar transistors (HBTs) for use in ultra-high frequency radar and communication systems. This three years program led to improvement in state- of-the-art HBT bandwidth and to the development of design methodologies for transistor circuits at millimeter-wave (mm-wave) frequencies. Under funding from this program, the first small-signal HBT amplifiers in the 140-220 GHz frequency band were demonstrated.