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Strained InGaAs/InAlAs Quantum Wells for Complementary III-V Transistors.

机译：用于互补III-V晶体管的应变InGaas / Inalas量子阱。

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Bennett, B. R.; Chick, T. F.; Boos, J. B.; Champlain, J. G.; Podpirka, A. A.;
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年度 2014
页码 1-7
总页数 7
原文格式 PDF
正文语种 eng
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1. Strained InGaAs/InAlAs quantum wells for complementary Ⅲ-Ⅴ transistors [J] . Brian R. Bennett, Theresa F. Chick, J. Brad Boos, Journal of Crystal Growth . 2014,第feba15期

机译：互补Ⅲ-Ⅴ晶体管的应变InGaAs / InAlAs量子阱
2. Current-voltage and light-current characteristics in highly strained InGaAs/InAlAs quantum cascade laser structures [J] . S. Banerjee, K.A. Shore, C.J. Mitchell, IEE proceedings. Part G, Circuits, devices and systems . 2005,第5期

机译：高应变InGaAs / InAlAs量子级联激光器结构中的电流-电压和光电流特性
3. Anomalous I versus V characteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators [J] . M P Pires, F Guastavino, B Yavich, Semiconductor science and technology . 2003,第8期

机译：用于幅度调制器的InGaAs / InAlAs应变多量子阱结构的反常I与V特性
4. A strained InGaAs/InAlAs coupled quantum well with polarization-independent large positive electro-refractive index change [C] . Zhixin Xu Optoelectronic materials and devices III . 2008

机译：具有偏振无关的大正电折射率变化的应变InGaAs / InAlAs耦合量子阱
5. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates. [D] . Shen, Lei. 1997

机译：GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Rashba Spin-Orbit Coupling Probed by the Weak Antilocalization Analysis in InAlAs/InGaAs/InAlAs Quantum Wells as a Function of Quantum Well Asymmetry [O] . Koga Takaaki, Nitta Junsaku, Akazaki Tatsushi, 2002

机译：通过InAlAs / InGaAs / InAlAs量子阱中的弱反定位分析探测的Rashba自旋轨道耦合与量子阱不对称性的关系

Strained InGaAs/InAlAs Quantum Wells for Complementary III-V Transistors.

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