Reduced Power Consumption in GaAs-Based Bipolar Cascade Lasers.

摘要

A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. We investigate the current voltage characteristics of individual degenerately doped n(+) and p(+) regions grown by MBE and then place the most promising designs within the individual laser substructures. This has resulted in a 1 V reduction in operating voltage, as verified by comparing the lasing characteristics of several edge-emitting laser devices.