首页> 美国政府科技报告 >THIN SOLID FILMS: An International Journal on the Science and Technology of Condensed Matter Films. Volume 412 Nos. 1-2, June 3, 2002. Proceedings of the Workshop on MBE and VPE Growth, Physics, Technology (4th), Held in Warsaw, Poland, on 24-28 September 2001
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THIN SOLID FILMS: An International Journal on the Science and Technology of Condensed Matter Films. Volume 412 Nos. 1-2, June 3, 2002. Proceedings of the Workshop on MBE and VPE Growth, Physics, Technology (4th), Held in Warsaw, Poland, on 24-28 September 2001

机译:薄固体薄膜:凝聚态薄膜科学与技术国际期刊。 2002年6月3日第412卷第1-2期。2001年9月24日至28日在波兰华沙举行的mBE和VpE增长,物理,技术研讨会(第4期)会议记录

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Contents: Preface (J. Kossut); Hybrid epitaxial structures for spintronics (J. De Boeck, W. Van Roy, et al.); Size effects in epitaxial films of magnetite (J. Korecki, B. Handke, et al.); Shadow mask technology (T. Schallenberg, C. Schumacher, et al.); Trions as a probe of spin injection through II-VI magnetic/non-magnetic heterointerface (M. Ghali, J. Kossut. et al. ); The growth modes of epitaxial Au/Co/Au sandwiches (A. Wawro, L.T. Baczewski, et al.); Polarity selection process and polarity manipulation of GaN in MOVPE and RF-MBE growth (A. Yoshikawa, K. Xu); SiGe(C) epitaxial technologies--Issues and prospectives (T.J. Grasby, T.E. Whall, et al.); Influence of covering on critical thickness of strained In(x) Ga(1-x)As layer (A. Jasik, K. Kosiel, et al.); MOVPE technology and characterisation of silicon &-doped GaAs and Al(x) Ga(1-x)As (B. Ciana, D. Radziewicz, et al.); Explanation of the initial phase change vs. incident angle of the RHEED intensity oscillation (A. Nemcsics); Laterally overgrown structures as substrates for lattice mismatched epitaxy (Z. R. Zytkiewicz); Monitoring epiready semiconductor wafers (D.A. Allwood, S. Cox, et al.); Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots (A. Babinski, J. Jasinski); CdSe quantum islands in ZnSe: A new approach (E. Kurtz, B. Dal Don, et al.); CdTe/ZnTe quantum dots--Growth and optical properties (S. Mackowski); Investigations of optical properties of active regions in vertical cavity surface emitting lasers grown by MBE (K. Regiski, T. Ochalski, et al.); Photoluminescence mapping and angle-resolved photoluminescence of MBE-grown InGaAs/GaAs RC LED and VCSEL structures (A. Wojcik, T.J. Ochalski, et al.); Ferromagnetic GaMnAs/GaAs superlattices--MBE growth and magnetic properties (J. Sadowski, R. Mathieu, et al.); and MBE growth and characterization of Hg based compounds and heterostructures (C.R. Becker, X. C. Zhang, et al.).

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