Electrical Contacts to A1GaN for UV Detectors.

摘要

Along with the advancement of III-V nitride materials and devices has come the need for high performance electrical contacts to these semiconductors. This document contains the major findings of a study of contacts to AlGaN performed at The Pennsylvania State University during the period January, 1999- December, 2002 under AFOSR grant F49620-99-1-0176. The findings are discussed in four sections, which cover ohmic contacts to n-AlGaN, Schottky barrier contacts to n-AlGaN, ohmic contacts to p-type GaN, and ohmic contacts to p-type AlGaN. We then comment briefly on metallurgical considerations for these contacts and worthwhile avenues for future investigations.