Uncooled RF Electronics for Airborne Radar

摘要

Improvements to the AlGaN/GaN HEMT device technology was studied at the epitaxial level by MOCVD, aimed at enhancing efficiency and linearity. A number of projects were performed under the program, including reducing the contact resistance, introducing a type of contacts that permits very short access regions, introducing hot electron launching into the channel, and double channel structures. Basic research in support of these projects was also performed, including studies of non-planar selective area growth, polarization effects in AlGaN/CaN heterostructures, and doping of GaN with Fe and oxygen.