Nd-Doped YBa(2)Cu(3)O(7-x) Films Deposited by Pulsed Laser Ablation (Postprint)

摘要

Nd doped YBa2Cu3O7-x targets (NdxY1-xBa2Cu3O7-x; x = 0, 0.2, 0.4, 1) were prepared in-house and were used to deposit films by pulsed laser ablation in 300 mTorr of oxygen to study the Nd substitution effects on the film properties. Film composition was found to match very closely to the composition of the targets as determined from X-ray photoelectron spectroscopy. The critical transition temperature (Tc) was found to be reduced as the Nd substitutions were increased in the films. Raman spectra taken from the films indicate that c-axis misalignment and some cation disorder may be present in the films with poor Tc. Transport critical current density (Jc) of 3 x 106 A/cm2 was measured in Nd0.4Y0.6Ba2Cu3O7-x films.