High Performance Low Cost Ferroelectric Phase Shifters Designed for Simple Biasing.

摘要

A novel approach in ferroelectric phase shifters design using Ba(sub x)Sr(sub (1-x))TiO3 (BSTO) films in a multilayer dielectric coplanar waveguide structure is described. By including a low loss dielectric layer (SiO2) between the coplanar waveguide conductors and the ferroelectric material in conjunction with a via to allow the signal conductors to contact the ferroelectric layer to employ biasing, significant reduction in insertion loss can be achieved in conjunction with a three fold increase in figure of merit (degree/dB) compared to the case with direct metallization on the ferroelectric layer.