High Performance Long-Wave Infrared (LWIR) HgCdTe on Silicon

摘要

It is critical in the field of infrared imaging to reduce focal plane array costs and simultaneously improve their performance. The use of long wavelength infrared HgCdTe grown on Si substrates will reduce array costs, increase their mechanical strength and permit the fabrication of larger area arrays than possible with present-day technology based on bulk CdZnTe substrates.