首页> 美国政府科技报告 >Study of Quantum Point Contact via Low Temperature Scanning Gate Microscopy
【24h】

Study of Quantum Point Contact via Low Temperature Scanning Gate Microscopy

机译:低温扫描门显微镜对量子点接触的研究

获取原文

摘要

Two types of quantum point contacts have been studied by low temperature scanning gate microscopy. In addition to the usual bright spot, which corresponds to a large conductance change at the constriction, ring structures are observed near the center of the quantum point contact. The ring diameter shrinks with increasing base conductance when the side gate voltage is changed. The rings are thought to relate to the observation of impurity potentials in the constriction region.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号