Characterization of Passivated Indium Antimonide

摘要

Infrared absorption and photoluminescence measurements have been used to optically characterize bulk-grown, 680 micrometers thick, indium antimonide (InSb), both as-grown and after passivation by either anodization or a 700 Angstrom layer of silicon oxide (SiOx). Spectra were obtained using Fourier transform infrared (FT-IR) spectroscopy. Results include the effects of sample temperature in the range of 10 - 300 K and 4.636 micrometers laser pump power in the range of 28 mW to 1.43 W for the photoluminescence spectrum.