Research and Development of Coated Conductors Using Metal Organic Chemical Vapor Deposition.

摘要

This is a new 3-year program to build on the success of the previously funded AFOST Contract FA9550-04-C-0020. In the last year of this program, we made major progress in both objectives of the program. We fabricated films of different thickness by our standard MOCVD processes and worked with our collaborators (ORNL, LANL, FSU,) to understand the microstructural reasons for the Ic performance using a variety of advanced characterization tools. We then modified our MOCVD process using a multipass technique to improve Ic performance in thick films. We modified rare-earth composition to improve critical current performance. This report addresses progress made in the first 3 months of the new program.