Advanced RF Sources Based on Novel Nonlinear Transmission Lines.

摘要

We compute the Green s function on a slow wave structure. We derive the scaling laws for the contact resistance of both bulk contact and thin film contact, with general aspect ratios and vastly different resistivity in the different contact members. We discover a voltage scale, which depends only on material property, that characterizes the robustness of the material against runaway heating due to electro-thermal instability. We identify the role of the RF magnetic field, and the role of RF electric field, in the enhanced heating of rough surfaces including bumps and troughs. We investigate the effects of surface irregularities, and more generally of random manufacturing errors, on the performance of traveling wave amplifiers. We construct a scaling law for the limiting current for spherical and cylindrical diode, which is the first successful attempt in 90 years to provide a simple analytic scaling for the celebrated (numerical) solutions of Langmuir and Blodgett. We derive a new scaling law for a ballistic diode, which is a key component for the vacuum transistor , a high-speed transistor envisioned for the future.