Nucleation and Growth Control of ZnO via Impurity-mediated Crystallization.

摘要

The primary objective is to develop a fabrication method of ZnO based on magnetron sputtering, impurity-mediated crystallization (IMC) , where crystal nucleation and the growth are controlled by adsorbed impurities on the growth surface. By utilizing ZnO films prepared by IMC method as buffer layers (IMC buffer layers), two kinds of high-quality ZnO based semiconductors have been fabricated, the properties of which are superior to those of conventional ZnO films fabricated without IMC buffer layers.