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Tunable, Room Temperature Light-emitting Diodes Based on Strained Si/SiGe Heterostructures

机译：基于应变si / siGe异质结构的可调谐室温发光二极管

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摘要

This is the report of a project to engineer SiGe/Si heterostructures for a type-I band alignment in which the emission intensity at around 1 micrometer is enhanced over conventional Si-based diodes, and to develop sight- emitting diodes based on the novel type-I SiGe/Si heterostructure.

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作者
Cheng, H. H.; Sun, G.; Soref, R. A.;
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年度 2009
页码 p.1-5
总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Heterogeneity; Taiwan; Germanium; Silicon; Light emitting diodes; Engineers; Room temperature; Emission;

机译：异质性;台湾;锗;硅;发光二极管;工程师;室温;发射;

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专利

1. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors [J] . Kao Kuo-Hsing, Verhulst Anne S., Rooyackers Rita, Journal of Applied Physics . 2014,第21期

机译：基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
2. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors [J] . Kuo-Hsing Kao, Anne S. Verhulst, Rita Rooyackers, Journal of Applied Physics . 2014,第21期

机译：基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
3. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer [J] . Baidakova N. A., Bobrov A. I., Drozdov M. N., Semiconductors . 2015,第8期

机译：带有薄氧化层的绝缘硅衬底上的发光SiGe异质结构的生长
4. Electroluminescence from strained SiGe quantum dot light-emitting diodes [C] . T. H. Cheng, M. H. Liao, C. W. Liu IEEE Conference on Nanotechnology . 2007

机译：应变SiGe量子点发光二极管的电致发光
5. Development of a sensor to measure carbon monoxide, dihydrogen oxide concentrations and gas temperature using a 1.56 micron tunable diode laser. [D] . Wu, Quan. 2003

机译：使用1.56微米可调谐二极管激光器开发的用于测量一氧化碳，二氧化氢浓度和气体温度的传感器。
6. Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres [O] . Jonghak Kim, Heeje Woo, Kisu Joo, -1

机译：具有嵌入式二氧化硅空心纳米球的应变较小且效率更高的GaN发光二极管
7. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors [O] . Kao Kuo-Hsing, Verhulst Anne, Rooyackers Rita, 2014

机译：基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景

Tunable, Room Temperature Light-emitting Diodes Based on Strained Si/SiGe Heterostructures

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