首页> 美国政府科技报告 >Gallium Nitride Monolithic Microwave Integrated Circuit Designs Using 0.25 m Qorvo Process.

【24h】

Gallium Nitride Monolithic Microwave Integrated Circuit Designs Using 0.25 m Qorvo Process.

机译：采用0.25 m Qorvo工艺的氮化镓单片微波集成电路设计。

获取原文

AI期刊论文写作 >>

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Penn, J. E.;
展开▼
作者单位

展开▼
年度 2017
页码 1-30
总页数 30
原文格式 PDF
正文语种 eng
中图分类
关键词
Radio frequency;

机译：无线电频率;

相似文献

外文文献
中文文献
专利

1. From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit [J] . Osmanoglu Sinan, Ozbay Ekmel International journal of numerical modelling . 2021,第5期

机译：从模型到低噪声放大器单片微波集成电路：0.03-2.6 GHz塑料四扁平无铅包装镓 - 氮化物低噪声放大器单片微波集成电路
2. Designing Gallium Nitride-Based Monolithic Microwave Integrated Circuits for the Ka, V, and W Bands [J] . Yu. V. Fedorov, D. L. Gnatyuk, A. S. Bugaev, Russian Microelectronics . 2016,第2期

机译：设计用于Ka，V和W波段的基于氮化镓的单片微波集成电路
3. Three-dimensional monolithic microwave integrated circuit technology for fully computer-aided design-compatible monolithic microwave integrated circuit development [J] . Kenjiro Nishikawa, Ichihiko Toyoda, Kenji Kamogawa, International journal of RF and microwave computer-aided engineering . 1998,第6期

机译：用于完全计算机辅助设计兼容的单片微波集成电路开发的三维单片微波集成电路技术
4. Gallium Nitride Monolithic Microwave Integrated Circuits for Compact Ka-Band Earth Science Remote Sensing Frontends [C] . Andy Fung, James Hoffman, Lorene Samoska, IEEE Radio and Wireless Symposium . 2021

机译：氮化镓单片微波集成电路，用于紧凑型KA频段科学遥感前端
5. High speed, high power gallium indium phosphide/gallium arsenide HBTs and their application to microwave monolithic integrated circuits (MMICs) [D] . Park, Jae-Woo. 2000

机译：高速，高功率镓铟磷化铟/砷化镓HBT及其在微波整体集成电路（MMICS）中的应用
6. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band [O] . Junfeng Li, Shuman Mao, Yuehang Xu, 2018

机译：0.1μmAlGaN / GaN高电子迁移率晶体管（HEMT）工艺的改进大信号模型及其在W波段实用单片微波集成电路（MMIC）设计中的应用
7. Performance and Applications of Gallium-Nitride Monolithic Microwave Integrated Circuits (GaN MMICs) [O] . Jonathan B. Scotta, Anthony E. Parkerb 2015

机译：氮化镓单片微波集成电路（GaN mmIC）的性能和应用

Gallium Nitride Monolithic Microwave Integrated Circuit Designs Using 0.25 m Qorvo Process.

著录项

引文网络

相似文献

相关主题

期刊订阅