Elements of Silicon-based Spintronic Circuits

摘要

The goal of this project was to fabricate and measure Silicon spin transport devices designed to uncover the fundamental materials science, device design parameters, and operational limitations including temperature dependence, spin dephasing studies, doping dependence, and spin transport at interfaces. We have made major advancements in understanding the science and engineering of spin transport in silicon in all these aspects, as documented in 5 published research papers, one published review paper, two as-yet unpublished (but publicly-available) manuscripts (one review), and one book chapter.