Frequency-Agile Wide-Bandwidth Power Interface to Support Incremental Virtual Prototyping.

摘要

In order to make GaN devices applicable in power electronics and best exploit the capabilities and advantages of these devices, the authors have been involved in the design and fabrication of a novel high-speed, low power- loss driver IC for 1A, 100V GaN HFET devices. The gate driver IC, developed at the University of South Carolina, provides a convenient and smart way to use GaN devices in power electronics, as well as making it possible to achieve miniaturization, high efficiency, reliability, and low cost for power systems. Publications resulting from this work describe the design of the driver IC, demonstrate the effectiveness of the new driver IC and the GaN HFET devices in power electronics applications.