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Thermal Investigation of Three-Dimensional GaN-on-SiC High Electron Mobility Transistors.

机译：三维GaN-on-siC高电子迁移率晶体管的热学研究。

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Hao, Q.;
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年度 2017
页码 1-34
总页数 34
原文格式 PDF
正文语种 eng
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1. A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors [J] . Qing Hao, Hongbo Zhao, Yue Xiao Journal of Applied Physics . 2017,第20期

机译：用于二维GaN-on-SiC高电子迁移率晶体管电热研究的混合仿真技术
2. Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors [J] . Chen Ding-Yuan, Malmros Anna, Thorsell Mattias, IEEE Electron Device Letters . 2020,第6期

机译：“无缓冲”GAN-SIC高电子移动晶体管的微波性能
3. Design of an oscillator with low phase noise and medium output power in a 0.25 µm GaN-on-SiC high electron-mobility transistors technology [J] . Hang Liu, Xi Zhu, Chirn Chye Boon, Microwaves, Antennas & Propagation, IET . 2015,第8期

机译：0.25 µm GaN-on-SiC高电子迁移率晶体管技术中具有低相位噪声和中等输出功率的振荡器的设计
4. Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions [C] . C. Heitzinger, C. Ringhofer, S. Ahmed, International Symposium on Nanoscale Devices, Materials, and Biological Systems: Fundamentals and Applications . 2005

机译：精确的电子迁移率三维模拟，包括电子和电子掺杂物相互作用
5. Impact of electrically and thermally induced physical defects on the reliability of AlGaN/GaN high electron mobility transistors. [D] . Holzworth, Monta Raymond, Jr. 2013

机译：电和热感应物理缺陷对AlGaN / GaN高电子迁移率晶体管的可靠性的影响。
6. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study [O] . Kyu-Won Jang, In-Tae Hwang, Hyun-Jung Kim, 2020

机译：具有铜填充结构的AlGaN / GaN高电子迁移率晶体管的热分析和工作特性：仿真研究
7. A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors [O] . Hao, Qing, Zhao, Hongbo, Xiao, Yue 2017

机译：用于二维GaN-on-SiC高电子迁移率晶体管电热研究的混合仿真技术

Thermal Investigation of Three-Dimensional GaN-on-SiC High Electron Mobility Transistors.

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