AN APPRAISAL OF TRANSISTOR THERMAL RESISTANCE AND JUNCTION TEMPERATURE

摘要

The current "state-of-the-art" of pulsed thermal resistance measurements is reviewed. Some of the reasons for the apparent lack of correlation in thermal measurements when these techniques are used are presented. Two techniques of continuous thermal resistance measurements are presented and possible sources of error indicated. Some preliminary data is presented which indicates that thermal resistance measurements made by the continuous hFE. technique is the most sensitive method currently known.