A DEVELOPMENT STUDY OF A HIGH FREQUENCY UNIPOLAR FIELD EFFECT TRANSISTOR

摘要

The broad objective of the contract herein reported was to study the construction and performance of s very snail active area field effect transistor. It was desired to make a high 100 Mc. input impedance, high transconductance field effect transistor. The Input impedance at 100 He, is predominantly capacitivs, and high input Impedance Is obtained by making the device area as small as possible. High trans-conductance is sought by making an intordigitated structure.