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FLUX-SWITCHING PROPERTIES OF A PARTIALLY SET CORE

机译:部分置核的磁通切换特性

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摘要

It was found that the partial setting very significantly affected the subsequent switching in a manner not anticipated on the basis of domain wall switching. This was true not only anticipated on the basis of domain wall switching. This was true not only for very large applied H fields, but also for H ranging all the way down to H. Thus, even though rotational switching may explain some of the effects at high fields, it offers no explanation at very low fields where rotational switching is presumed not to occur.

著录项

  • 作者

    V. W. Hesterman;

  • 作者单位
  • 年度 1963
  • 页码 1-66
  • 总页数 66
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工业技术;
  • 关键词

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