A pulse width modulator model Is designed and constructed to demonstrate that such a modulation function can be realized within a 250 by 125 by 30 mil silicon integrated semiconductor structure0 All discrete model components are chosen to be reproducible 'within the above Integrated structure c Three active and seven passive components are used,, The modulator utilizes trailing edge modulation and samples a single audio input signal at 20kc. For an unmodulated output pulse width of 25 microseconds, a modulation index of 0.25 was obtained with an input signal amplitude of 90 millivolts. The nonllnearity of the modulator response was less than, five percent
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