PRODUCTION ENGINEERING MEASURE DA-36-039-SC-86727 SILICON PLANAR EPITAXIAL TRANSISTOR TYPE 2N2193

摘要

1. Phase II Screen Experiments continue to show the sane patterns as noted previously;by far, the majority of 1.6 watt failures are emitter opens and VCE shorts: anese bear no apparent relationship to the inversion layer failures seen at the rated .8 watt levels.n2. Phase II Temperature Only Step Stress indicates results at least as favorable as it’s Phase I counter-part;n3. Comparison of Phases I and II Voltage + Temperature Step Stress results indicates fewer inversion layer rejects for Phase II.