Field Effect Triodes and Space Charge Limited Triodes

摘要

A detailed conduction mechanism for thin-film field effect triodes is presented. New experimental findings which seem to substantiate the trap emptying mechanism are outlined. The results of experiments in varying SiO and CdS thickness in field effect triodes and their effect on device performance are shown. Effects of device aging and electrode configurations on device performance are also discussed. Some theoretical considerations for observation of space charge limited current in CdS films are discussed. The methods of fabrication of SCL devices are presented and a new study of SCL current in films and CdS sandwich structures is discussed. A post-deposition treatment of cadmium sulfide films is outlined and results are presented. Preparation of CdS films at various substrate temperatures and in ultrahigh vacuum is discussed. A new molecular beam evaporation source for deposition of CdS is also discussed. The difficulties in evaporation of zinc oxide are discussed and the results of these experiments are presented. (Author)